BSS126H6327XTSA2 vs BSS806NEH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS126H6327XTSA2 von Infineon und BSS806NEH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS126H6327XTSA2 | BSS806NEH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,14 |
| FET Type | N-Channel Depletion Mode | — |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at Ta | 21 mA | — |
| Power Dissipation (PD) at Ta | 500 mW | — |
| On-Resistance (RDS(on)) Max | 500 ohm (typical for depletion-mode) | — |
| Gate-Source Voltage (VGS) Range | [DATA_NEEDED: VGS max/min] | — |
| Technology | SIPMOS (DMOS) | — |
| Gehäuse | SOT-23-3 (PG-SOT23) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction, typical) | [DATA_NEEDED: operating temperature range] |
| Pin-Anzahl | 3 | 3 (Gate, Drain, Source) |
| Configuration | Single | — |
| Channel Mode | Depletion (normally-on at VGS = 0) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes (Infineon 'green' package) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS806NEH6327XTSA1 |
| Transistortyp | — | N-Channel MOSFET |
| Mode of Operation | — | Enhancement-mode |
| Drain-Source Voltage (VDS) | — | 20 V (maximum) |
| Continuous Drain Current (ID) | — | 2.3 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |