BSS126H6327XTSA2 vs BSS806NEH6327XTSA1 对比
详细并排对比 BSS126H6327XTSA2 出自 Infineon 和 BSS806NEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS126H6327XTSA2 | BSS806NEH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $0.14 |
| FET Type | N-Channel Depletion Mode | — |
| Drain-Source Voltage (VDS) Max | 600 V | — |
| Continuous Drain Current (ID) at Ta | 21 mA | — |
| Power Dissipation (PD) at Ta | 500 mW | — |
| On-Resistance (RDS(on)) Max | 500 ohm (typical for depletion-mode) | — |
| Gate-Source Voltage (VGS) Range | [DATA_NEEDED: VGS max/min] | — |
| Technology | SIPMOS (DMOS) | — |
| 封装 | SOT-23-3 (PG-SOT23) | PG-SOT23 (SOT-23-3) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction, typical) | [DATA_NEEDED: operating temperature range] |
| 引脚数量 | 3 | 3 (Gate, Drain, Source) |
| Configuration | Single | — |
| Channel Mode | Depletion (normally-on at VGS = 0) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes (Infineon 'green' package) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS806NEH6327XTSA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Mode of Operation | — | Enhancement-mode |
| Drain-Source Voltage (VDS) | — | 20 V (maximum) |
| Continuous Drain Current (ID) | — | 2.3 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |