BSS169H6327XTSA1 vs BSP316PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS169H6327XTSA1 von Infineon und BSP316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS169H6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,21 |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | -100 V |
| Continuous Drain Current (ID) | 170 mA (Ta) | — |
| Power Dissipation (PD) | 360 mW (Ta) | — |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | [DATA_NEEDED: VGS(th) typical] |
| Betriebstemperaturbereich | [DATA_NEEDED: junction/ambient operating temperature range] | -55 C to +150 C (junction) |
| Gehäuse | PG-SOT23 (SOT-23-3) | PG-SOT223-4 (TO-261-4) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | SIPMOS (P-channel MOSFET) |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Anzahl der Pins | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |