BSS192PH6327FTSA1 vs BSD214SNH6327XTSA1 Vergleich

Detaillierter Direktvergleich von BSS192PH6327FTSA1 von Infineon und BSD214SNH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSS192PH6327FTSA1 BSD214SNH6327XTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,34 $0,27
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide), OptiMOS
Drain-to-Source Voltage (Vdss) 250 V 20 V
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Gehäuse PG-SOT89 (SOT-89-3, 4-pin 3+Tab) SOT-363 (PG-SOT363-PO), 6-pin
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: Tj max / operating temp] -55C to +150C (junction)
Automotive Qualification AEC-Q101 (per distributor listing) AEC-Q101 qualified
Series SIPMOS Small-Signal-Transistor —
Part Status Active —
RoHS-Status [DATA_NEEDED: explicit RoHS status from datasheet] Compliant
Continuous Drain Current (Id) at 25C — 1.5 A
Power Dissipation (Pd) at Ta — 500 mW
Gate Drive Voltage (Rds On rated) — 2.5 V, 4.5 V
Rds On (Max) @ Vgs=4.5V — [DATA_NEEDED: Rds On at Vgs=4.5V]
Rds On (Max) @ Vgs=2.5V — [DATA_NEEDED: Rds On at Vgs=2.5V]
Vgs(th) (typical) — [DATA_NEEDED: Vgs threshold typical]
Lead Plating — Pb-free
MSL-Level — 1
Standard Pack Quantity — 3000 (Tape & Reel)

Datenblätter & Ressourcen

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