BSS214NH6327XTSA1 vs BSS123NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS214NH6327XTSA1 von Infineon und BSS123NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NH6327XTSA1 | BSS123NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,09 |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 20 V | 100 V |
| Continuous Drain Current (ID) | 1.5 A (Ta) | 190 mA (Ta) |
| Power Dissipation (PD) | 500 mW (Ta) | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | — |
| Gehäuse | SOT-23 (PG-SOT23), 3 pins | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 °C to +150 °C (junction) |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (automotive) |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| ESD Protection | Yes (gate ESD diode) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and max VGS(th)] |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| RoHS Compliance | — | Yes (Pb-free lead plating) |