BSS214NWH6327XTSA1 vs BSR315PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS214NWH6327XTSA1 von Infineon und BSR315PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NWH6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 | BSR315PH6327XTSA1 |
| Series | OptiMOS | OptiMOS P-Channel |
| FET Type | N-Channel | P-Channel, Enhancement Mode |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| Gehäuse | PG-SOT323 (SOT-323-3) | PG-SC59-3 / SOT-23-3 |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -620 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 800 mOhm @ -620 mA, -10 V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max VGS) |
| Input Capacitance (Ciss) | — | 176 pF @ 25 V |
| Total Gate Charge (Qg) | — | 6 nC @ 10 V |
| Betriebstemperaturbereich | — | -55 C to +150 C (TJ) |
| Pin-Anzahl | — | 3 |
| Packaging | — | Tape & Reel (TR) |
| Automotive Qualified | — | Yes (per Infineon product family marking) |