BSS214NWH6327XTSA1 vs BSR315PH6327XTSA1 对比

详细并排对比 BSS214NWH6327XTSA1 出自 Infineon 和 BSR315PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 量产中
Infineon
BSR315PH6327XTSA1 BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 ✓ 量产中

规格对比

参数 BSS214NWH6327XTSA1 BSR315PH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.15 $0.22
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS214NWH6327XTSA1 BSR315PH6327XTSA1
Series OptiMOS OptiMOS P-Channel
FET Type N-Channel P-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) @ 25C 1.5 A —
Rds(on) Max @ Vgs=4.5V 250 mOhm —
Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V —
Power Dissipation (Pd) @ Ta=25C 500 mW —
封装 PG-SOT323 (SOT-323-3) PG-SC59-3 / SOT-23-3
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
Qualification AEC-Q101 (Automotive) —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -620 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
On-State Resistance (RDS(on)) — 800 mOhm @ -620 mA, -10 V
Gate Threshold Voltage (VGS(th)) — ±20 V (max VGS)
Input Capacitance (Ciss) — 176 pF @ 25 V
Total Gate Charge (Qg) — 6 nC @ 10 V
工作温度范围 — -55 C to +150 C (TJ)
引脚数量 — 3
Packaging — Tape & Reel (TR)
Automotive Qualified — Yes (per Infineon product family marking)

数据手册与资源

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