BSS214NWH6327XTSA1 vs IGD08N120S7ATMA1 Vergleich
Detaillierter Direktvergleich von BSS214NWH6327XTSA1 von Infineon und IGD08N120S7ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NWH6327XTSA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 | — |
| Series | OptiMOS | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Trench Field Stop, 7th generation |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) @ 25C | 1.5 A | — |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | — |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | — |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | — |
| Gehäuse | PG-SOT323 (SOT-323-3) | PG-TO252-3 (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Betriebs-Sperrschichttemperatur | — | -40C to +175C (industry grade) |
| Configuration | — | Single |