BSS314PEH6327XTSA1 vs BSS214NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS314PEH6327XTSA1 von Infineon und BSS214NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS314PEH6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,15 | $0,09 |
| FET Type | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 2 (planar N-channel) |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) @ TA=25C | -1.5 A | — |
| Power Dissipation (PD) @ TA=25C | 500 mW | — |
| RDS(on) max @ VGS=-10V | 140 mOhm | — |
| RDS(on) max @ VGS=-4.5V | [DATA_NEEDED: RDS(on) at -4.5V VGS] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Drive Voltage (max Rds(on)) | -4.5 V, -10 V | — |
| Gehäuse | PG-SOT23-3 (SOT-23-3) | SOT-23 (PG-SOT23), 3 pins |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (TJ) | -55C to +150C (junction) |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Pin Configuration | G-D-S (Gate, Drain, Source) | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1.5 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| ESD Protection | — | Yes (gate ESD diode) |