BSS316NH6327XTSA1 vs BSL215CH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS316NH6327XTSA1 von Infineon und BSL215CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSS316NH6327XTSA1 | BSL215CH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,21 |
| FET Type | N-Channel, Enhancement Mode | N-Channel and P-Channel Complementary Pair |
| Technology | OptiMOS 2 (Trench) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | — |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | — |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | — |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | — |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | — |
| Betriebs-Sperrschichttemperaturbereich | -55 C to +150 C | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | — |
| Montageart | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Gehäuse / Bauform | — | PG-TSOP6-6 (6-pin TSOP) |
| Betriebstemperatur | — | -55C to +150C |
| Configuration | — | Half-bridge (1 N + 1 P) |
| Lead-Free | — | Yes |