BSS606NH6327XTSA1 vs BSS214NWH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS606NH6327XTSA1 von Infineon und BSS214NWH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS606NH6327XTSA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Small Signal/Power | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 3.2 A (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| On-Resistance (RDS(on)) | 60 mΩ max @ VGS=10 V | — |
| Gehäuse | PG-SOT-89 (TO-243AA) | PG-SOT323 (SOT-323-3) |
| Montageart | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Qualification | Automotive (per family page) | AEC-Q101 (Automotive) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL-Level | 1 (per SOT-89 family standard) | — |
| Reel Quantity | 1000 pcs | — |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Betriebstemperatur | — | -55C to +150C (junction) |