BSS806NEH6327XTSA1 vs BSL316CH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS806NEH6327XTSA1 von Infineon und BSL316CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS806NEH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS806NEH6327XTSA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | 30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | PG-TSOP6-6 (TSOP6, 6-pin) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 6 |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Part Family | — | OptiMOS small-signal complementary MOSFET |
| Configuration | — | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Continuous Drain Current (N-channel ID) | — | 1.4 A |
| Continuous Drain Current (P-channel ID) | — | 1.5 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Technology | — | OptiMOS low-voltage MOSFET |
| Channel Type | — | N-channel + P-channel (dual) |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |