BSS806NEH6327XTSA1 vs BSL316CH6327XTSA1 对比
详细并排对比 BSS806NEH6327XTSA1 出自 Infineon 和 BSL316CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS806NEH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.14 | $0.22 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS806NEH6327XTSA1 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | 30 V |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| 封装 | PG-SOT23 (SOT-23-3) | PG-TSOP6-6 (TSOP6, 6-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 3 (Gate, Drain, Source) | 6 |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Part Family | — | OptiMOS small-signal complementary MOSFET |
| Configuration | — | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Continuous Drain Current (N-channel ID) | — | 1.4 A |
| Continuous Drain Current (P-channel ID) | — | 1.5 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| 工作温度 | — | -55C to +150C (junction) |
| Technology | — | OptiMOS low-voltage MOSFET |
| Channel Type | — | N-channel + P-channel (dual) |
| RoHS 状态 | — | Compliant |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |