BSS806NH6327XTSA1 vs BSS806NEH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS806NH6327XTSA1 von Infineon und BSS806NEH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS806NH6327XTSA1 | BSS806NEH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,19 | $0,14 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 2 (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 20 V | 20 V (maximum) |
| Continuous Drain Current (ID, Ta) | 2.3 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) | — |
| Gate Drive (recommended VGS) | 1.8 V to 10 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| Power Dissipation (PD, Ta) | 500 mW | — |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | [DATA_NEEDED: operating temperature range] |
| Gehäuse | PG-SOT23-3 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant (Pb-free plating) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS806NEH6327XTSA1 |
| Transistortyp | — | N-Channel MOSFET |
| Mode of Operation | — | Enhancement-mode |
| Continuous Drain Current (ID) | — | 2.3 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-Resistance RDS(on) | — | 57 mOhm (maximum) |
| Pin-Anzahl | — | 3 (Gate, Drain, Source) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Yes (compliant) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |