BSS816NWH6327XTSA1 vs BSS214NH6327XTSA1 Vergleich

Detaillierter Direktvergleich von BSS816NWH6327XTSA1 von Infineon und BSS214NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
BSS816NWH6327XTSA1 BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon

BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon

BSS816NWH6327XTSA1 ✓ Aktiv
Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktiv

Spezifikationsvergleich

Parameter BSS816NWH6327XTSA1 BSS214NH6327XTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,14 $0,09
Manufacturer Infineon Technologies —
Part Family BSS816NW (OptiMOS 2 Small-Signal) —
Transistortyp MOSFET, N-Channel —
Drain-Source Voltage (VDS) 20 V 20 V
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
RDS(on) max @ VGS=4.5V 160 mOhm —
RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Power Dissipation (PD) at TA=25C 500 mW —
Betriebstemperaturbereich -55C to +150C -55C to +150C (junction)
Gehäuse SOT-323 (PG-SOT323), 3-pin SOT-23 (PG-SOT23), 3 pins
Montageart Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
Technology OptiMOS 2 trench MOSFET OptiMOS 2 (planar N-channel)
ESD Protection Yes (integrated, per Infineon datasheet) Yes (gate ESD diode)
RoHS / Lead-Free RoHS compliant, lead-free —
MSL-Level 1 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Continuous Drain Current (ID) — 1.5 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Lead Finish — Pb-free lead plating (matte tin)
RoHS-Status — Compliant

Datenblätter & Ressourcen

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