BSS816NWH6327XTSA1 vs BSS316NH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS816NWH6327XTSA1 von Infineon und BSS316NH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS816NWH6327XTSA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,13 |
| Manufacturer | Infineon Technologies | — |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | — |
| Transistortyp | MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | 1.4 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| Betriebstemperaturbereich | -55C to +150C | — |
| Gehäuse | SOT-323 (PG-SOT323), 3-pin | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS 2 trench MOSFET | OptiMOS 2 (Trench) |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| MSL-Level | 1 | MSL1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source On-Resistance RDS(on) max | — | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | — | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | — | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | — | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | — | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | — | 500 mW |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +150 C |
| Lead Plating | — | Pb-free (Matte Tin) |
| RoHS-Status | — | Compliant |
| Automotive Qualification | — | AEC-Q101 qualified |