BSS87H6327FTSA1 vs BSP92PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS87H6327FTSA1 von Infineon und BSP92PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS87H6327FTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,18 | $0,31 |
| FET Type | N-Channel enhancement-mode | — |
| Drain-Source Voltage (VDS) | 240 V | -250 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | -260 mA (Ta) |
| Power Dissipation (PD) | 1 W (Ta) | 1.8 W (Ta) |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical and min/max] |
| Gehäuse | PG-SOT89-4-2 (SOT-89) | PG-SOT223-4 (SOT-223-4) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Pin-Anzahl | 3 (Gate / Drain / Source) | 4 (Gate, Drain, Drain, Source) |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | — |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Process Technology | Vertical DMOS | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS P-Channel Small-Signal Power MOSFET |
| Transistortyp | — | P-Channel Enhancement Mode MOSFET |
| Channel Polarity | — | P-Channel |
| Betriebstemperatur | — | -55C to +150C (Tj) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |