BSS87H6327FTSA1 vs BSS127H6327XTSA2 Vergleich
Detaillierter Direktvergleich von BSS87H6327FTSA1 von Infineon und BSS127H6327XTSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS87H6327FTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,18 | $0,03 |
| FET Type | N-Channel enhancement-mode | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | 240 V | 600 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 21 mA (Ta) |
| Power Dissipation (PD) | 1 W (Ta) | — |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4.5 V (logic level, rated) |
| Gehäuse | PG-SOT89-4-2 (SOT-89) | SOT-23-3 (PG-SOT23) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Pin-Anzahl | 3 (Gate / Drain / Source) | 3 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS-Status | Compliant | Compliant (lead-free) |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Process Technology | Vertical DMOS | — |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | — | 500 mW (Ta) |
| Betriebs-Sperrschichttemperatur | — | -55 C to +150 C |
| dv/dt Rated | — | Yes |
| Halogenfrei | — | Yes, per IEC 61249-2-21 |