BSZ018NE2LSATMA1 vs BSC020N03LSGATMA1 Vergleich
Detaillierter Direktvergleich von BSZ018NE2LSATMA1 von Infineon und BSC020N03LSGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ018NE2LSATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C (junction) |
| Gehäuse | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.2 V (typical range, per datasheet) |
| On-State Resistance (RDS(on)) at VGS=10V | — | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc=25C | — | 96 W |
| Gehäuse / Bauform | — | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Packaging | — | Tape & Reel |