BSZ018NE2LSATMA1 vs BSC020N03LSGATMA1 Comparaison
Comparaison détaillée côte à côte de BSZ018NE2LSATMA1 par Infineon et BSC020N03LSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | BSZ018NE2LSATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,31 | $0,42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Plage de température de fonctionnement | -55C to +150C | -55 C to +150 C (junction) |
| Boîtier | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sans halogène | Yes | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.2 V (typical range, per datasheet) |
| On-State Resistance (RDS(on)) at VGS=10V | — | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc=25C | — | 96 W |
| Boîtier / Format | — | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Packaging | — | Tape & Reel |