BSZ070N08LS5ATMA1 vs BSZ065N06LS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSZ070N08LS5ATMA1 von Infineon und BSZ065N06LS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ070N08LS5ATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ 5 (80 V logic-level) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | — |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ | — |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Power Dissition PD max at TC | 69 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +150 °C | — |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020, unleaded reflow) | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Reel Quantity | 5000 per 13-inch reel (T&R) | — |
| Series | — | OptiMOS™ 5 |
| Transistortyp | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 logic-level |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 1.8 nF |
| Betriebstemperaturbereich | — | -55°C to +150°C |