BSZ070N08LS5ATMA1 vs BSZ065N06LS5ATMA1 비교

다음의 상세 나란히 비교: BSZ070N08LS5ATMA1 제조: Infineon 및 BSZ065N06LS5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 ✓ 활성
Infineon
BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 ✓ 활성

사양 비교

파라미터 BSZ070N08LS5ATMA1 BSZ065N06LS5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.78 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ 5 (80 V logic-level) —
Polarity / Channel Type N-Channel enhancement mode —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TC 74 A (Tc, per datasheet) —
Continuous Drain Current (ID) at TA / Si [DATA_NEEDED: TA-rated ID] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed] —
On-Resistance RDS(on) max @ VGS=10 V 7 mΩ —
On-Resistance RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate Threshold Voltage VGS(th) Logic-level (drive compatible with 4.5 V) —
Total Gate Charge Qg [DATA_NEEDED: total Qg] —
Power Dissition PD max at TC 69 W —
동작 접합 온도 -55 °C to +150 °C —
패키지 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (per JEDEC J-STD-020, unleaded reflow) —
RoHS 상태 Compliant Compliant
Avalanche Rated Yes —
Reel Quantity 5000 per 13-inch reel (T&R) —
Series — OptiMOS™ 5
트랜지스터 유형 — N-Channel MOSFET
Technology — OptiMOS™ 5 logic-level
Drain-Source Voltage (VDS) Max — 60 V
Continuous Drain Current (ID) Max — 65 A
Drain Current @ Tc (ID, Tc=25°C) — 40 A
On-Resistance RDS(on) Max @ VGS=10V — 6.5 mΩ
Power Dissipation (PD) Max — 46 W
Gate Threshold Voltage (VGS(th)) — 2.3 V
Total Gate Charge (Qg) — 13 nC @ VGS=4.5 V
Input Capacitance (Ciss) — 1.8 nF
동작 온도 범위 — -55°C to +150°C

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