BSZ070N08LS5ATMA1 vs BSZ065N06LS5ATMA1 Сравнение
Подробное сравнение бок о бок BSZ070N08LS5ATMA1 от Infineon и BSZ065N06LS5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSZ070N08LS5ATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,78 | $0,62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ 5 (80 V logic-level) | — |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TC | 74 A (Tc, per datasheet) | — |
| Continuous Drain Current (ID) at TA / Si | [DATA_NEEDED: TA-rated ID] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | — |
| On-Resistance RDS(on) max @ VGS=10 V | 7 mΩ | — |
| On-Resistance RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage VGS(th) | Logic-level (drive compatible with 4.5 V) | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Power Dissition PD max at TC | 69 W | — |
| Рабочая температура перехода | -55 °C to +150 °C | — |
| Корпус | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (per JEDEC J-STD-020, unleaded reflow) | — |
| Статус RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Reel Quantity | 5000 per 13-inch reel (T&R) | — |
| Series | — | OptiMOS™ 5 |
| Тип транзистора | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 5 logic-level |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 1.8 nF |
| Диапазон рабочих температур | — | -55°C to +150°C |