BSZ096N10LS5ATMA1 vs BSZ065N03LSATMA1 Vergleich
Detaillierter Direktvergleich von BSZ096N10LS5ATMA1 von Infineon und BSZ065N03LSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSZ096N10LS5ATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,94 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Gate-Source Voltage (VGS max) | 20 V (typical) | — |
| Continuous Drain Current (ID, TC=25 °C) | 40 A | — |
| Maximum Silicon Drain Current (ID max) | 62 A | — |
| Pulse Drain Current (ID,pulse) | 160 A | — |
| On-Resistance RDS(on) max | 9.6 mΩ at VGS=10 V | — |
| Total Power Dissipation (Ptot, TC=25 °C) | 69 W | — |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | — |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 °C) | — |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | — |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 °C to +150 °C (junction) | -55C to +150C (junction) |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET (OptiMOS) |
| Gate Drive | Logic-level compatible | — |
| ESD Protection | Yes (gate-integrated) | — |
| RoHS-Status | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | — |
| Series | — | OptiMOS 30V |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Gehäuse / Bauform | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| MSL-Level | — | 1 |
| Gate Drive (typical) | — | 4.5 V |