BSZ120P03NS3GATMA1 vs BSZ0901NSIATMA1 Vergleich
Detaillierter Direktvergleich von BSZ120P03NS3GATMA1 von Infineon und BSZ0901NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
BSZ120P03NS3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSZ120P03NS3GATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,12 | $0,34 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (TA=25C) | -11 A | — |
| Continuous Drain Current (TC=25C) | -40 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 52 W | — |
| On-Resistance RDS(on) max @ VGS=-10V | 12 mOhm | — |
| On-Resistance RDS(on) max @ VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage VGS(th) typ | -1.7 V | — |
| Technology | OptiMOS P3 | OptiMOS trench N-channel MOSFET |
| Gehäuse | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C (typical MOSFET range) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Pin-Anzahl | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |