BSZ120P03NS3GATMA1 vs BSZ0901NSIATMA1 对比

详细并排对比 BSZ120P03NS3GATMA1 出自 Infineon 和 BSZ0901NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ120P03NS3GATMA1 BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon

BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon

BSZ120P03NS3GATMA1 ✓ 量产中

规格对比

参数 BSZ120P03NS3GATMA1 BSZ0901NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.12 $0.34
Polarity P-Channel —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (TA=25C) -11 A —
Continuous Drain Current (TC=25C) -40 A —
Power Dissipation (TA=25C) 2.1 W —
Power Dissipation (TC=25C) 52 W —
On-Resistance RDS(on) max @ VGS=-10V 12 mOhm —
On-Resistance RDS(on) max @ VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage VGS(th) typ -1.7 V —
Technology OptiMOS P3 OptiMOS trench N-channel MOSFET
封装 PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
工作温度范围 -55C to +150C -55 C to +150 C (typical MOSFET range)
安装类型 Surface Mount Surface Mount
MSL 等级 1 —
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Manufacturer — Infineon Technologies
Part Number — BSZ0901NSIATMA1
Series — OptiMOS 25V
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
引脚数量 — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)

数据手册与资源

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