BSZ130N03LSGATMA1 vs BSC076N06NS3GATMA1 Vergleich
Detaillierter Direktvergleich von BSZ130N03LSGATMA1 von Infineon und BSC076N06NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ AktivInfineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ130N03LSGATMA1 | BSC076N06NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,41 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Ta=25 C) | 10 A | — |
| Kontinuierlicher Drain-Strom (TC=25°C) | 35 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | — |
| Power Dissipation (Ta) | 2.1 W | 2.5 W |
| Power Dissipation (Tc) | 25 W | 69 W |
| Gehäuse | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | -55C to +150C |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes | Yes (per Infineon product page) |
| Qualification | Industrial / Commercial (non-automotive) | — |
| Product Family | — | OptiMOS 3 |
| Technology | — | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25C | — | 50 A |
| On-Resistance RDS(on) max at VGS=10V | — | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | — | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 3.5 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| RoHS Compliance | — | Compliant |