BSZ130N03LSGATMA1 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of BSZ130N03LSGATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSZ130N03LSGATMA1 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V β€”
Polarity / Channel Type N-Channel Enhancement Mode β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (Ta=25 C) 10 A β€”
Continuous Drain Current (Tc=25 C) 35 A β€”
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm β€”
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V β€”
Power Dissipation (Ta) 2.1 W 2.5 W
Power Dissipation (Tc) 25 W 69 W
Package PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C (junction) -55C to +150C
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Status Compliant β€”
Lead-Free Yes β€”
Halogen-Free Yes Yes (per Infineon product page)
Qualification Industrial / Commercial (non-automotive) β€”
Product Family β€” OptiMOS 3
Technology β€” N-Channel Trench MOSFET
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at TC=25C β€” 50 A
On-Resistance RDS(on) max at VGS=10V β€” 7.6 mΞ©
On-Resistance RDS(on) max at VGS=4.5V β€” 10.4 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 2.0 V to 3.5 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
RoHS Compliance β€” Compliant

Datasheets & Resources

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