BSZ15DC02KDHXTMA1 vs BSZ180P03NS3EGATMA1 Vergleich
Detaillierter Direktvergleich von BSZ15DC02KDHXTMA1 von Infineon und BSZ180P03NS3EGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ15DC02KDHXTMA1 | BSZ180P03NS3EGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,45 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| Transistortyp | N-Channel + P-Channel (complementary pair) | P-Channel MOSFET |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | OptiMOS P3 |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | — |
| P-Channel Continuous Drain Current (ID) | 3.2 A | — |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | — |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) - Ta | — | 9 A |
| Continuous Drain Current (ID) - Tc | — | 39.5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) max | — | 18 mΩ @ VGS = -10 V |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (QG) total | — | [DATA_NEEDED: QG total] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 40 W |
| Betriebstemperaturbereich | — | -55°C to +150°C (TJ) |
| RoHS-Status | — | Compliant |
| MSL-Level | — | 1 |
| Lead-Free | — | Yes |