BSZ15DC02KDHXTMA1 vs BSZ180P03NS3EGATMA1 比較
詳細な並列比較: BSZ15DC02KDHXTMA1 メーカー: Infineon および BSZ180P03NS3EGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSZ15DC02KDHXTMA1 | BSZ180P03NS3EGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.74 | $0.45 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| トランジスタタイプ | N-Channel + P-Channel (complementary pair) | P-Channel MOSFET |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | OptiMOS P3 |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | — |
| P-Channel Continuous Drain Current (ID) | 3.2 A | — |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | — |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| 動作接合温度 | -55 C to +175 C | — |
| パッケージ | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) - Ta | — | 9 A |
| Continuous Drain Current (ID) - Tc | — | 39.5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) max | — | 18 mΩ @ VGS = -10 V |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (QG) total | — | [DATA_NEEDED: QG total] |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 40 W |
| 動作温度範囲 | — | -55°C to +150°C (TJ) |
| RoHS ステータス | — | Compliant |
| MSLレベル | — | 1 |
| Lead-Free | — | Yes |