BSZ15DC02KDHXTMA1 vs BSZ180P03NS3EGATMA1 Comparison
Detailed side-by-side comparison of BSZ15DC02KDHXTMA1 by Infineon and BSZ180P03NS3EGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ15DC02KDHXTMA1
BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon
BSZ15DC02KDHXTMA1 β ActiveInfineon
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 β ActiveSpecification Comparison
| Parameter | BSZ15DC02KDHXTMA1 | BSZ180P03NS3EGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.45 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ15DC02KDHXTMA1 | β |
| Transistor Type | N-Channel + P-Channel (complementary pair) | P-Channel MOSFET |
| Technology | OptiMOSβ’2 (N-ch) + OptiMOSβ’-P2 (P-ch) | OptiMOS P3 |
| Drain-to-Source Voltage (VDS) Max | 20 V | β |
| N-Channel Continuous Drain Current (ID) | 5.1 A | β |
| P-Channel Continuous Drain Current (ID) | 3.2 A | β |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | β |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | β |
| Gate Drive Level | Super Logic level, 2.5 V rated | β |
| Configuration | Common drain (back-to-back source pair) | β |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| Lead-Free / RoHS | Yes / RoHS compliant | β |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID) - Ta | β | 9 A |
| Continuous Drain Current (ID) - Tc | β | 39.5 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-State Resistance (RDS(on)) max | β | 18 mΞ© @ VGS = -10 V |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (QG) total | β | [DATA_NEEDED: QG total] |
| Power Dissipation (Ta) | β | 2.1 W |
| Power Dissipation (Tc) | β | 40 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C (TJ) |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |
| Lead-Free | β | Yes |