BSZ15DC02KDHXTMA1 vs IRF4905SPBF Vergleich
Detaillierter Direktvergleich von BSZ15DC02KDHXTMA1 von Infineon und IRF4905SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ15DC02KDHXTMA1 | IRF4905SPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $1,18 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| Transistortyp | N-Channel + P-Channel (complementary pair) | — |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | HEXFET, planar cell |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | — |
| P-Channel Continuous Drain Current (ID) | 3.2 A | — |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | — |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55 C to +150 C |
| Gehäuse | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | D2PAK (TO-263) surface mount |
| Montageart | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Total Gate Charge (Qg) | — | 120 nC (typical per Mouser listing) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| RoHS-Status | — | Compliant (PBF suffix indicates Pb-free) |
| Qualification | — | JEDEC standard |