BSZ15DC02KDHXTMA1 vs IRF4905SPBF Comparaison
Comparaison détaillée côte à côte de BSZ15DC02KDHXTMA1 par Infineon et IRF4905SPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSZ15DC02KDHXTMA1 | IRF4905SPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,74 | $1,18 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| Type de transistor | N-Channel + P-Channel (complementary pair) | — |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | HEXFET, planar cell |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | — |
| P-Channel Continuous Drain Current (ID) | 3.2 A | — |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | — |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| Température de jonction en fonctionnement | -55 C to +175 C | -55 C to +150 C |
| Boîtier | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | D2PAK (TO-263) surface mount |
| Type de montage | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Total Gate Charge (Qg) | — | 120 nC (typical per Mouser listing) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Statut RoHS | — | Compliant (PBF suffix indicates Pb-free) |
| Qualification | — | JEDEC standard |