BSZ15DC02KDHXTMA1 vs IRF4905SPBF 对比

详细并排对比 BSZ15DC02KDHXTMA1 出自 Infineon 和 IRF4905SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 ✓ 量产中

规格对比

参数 BSZ15DC02KDHXTMA1 IRF4905SPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $1.18
Manufacturer Infineon Technologies —
Part Number BSZ15DC02KDHXTMA1 —
晶体管类型 N-Channel + P-Channel (complementary pair) —
Technology OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) HEXFET, planar cell
Drain-to-Source Voltage (VDS) Max 20 V —
N-Channel Continuous Drain Current (ID) 5.1 A —
P-Channel Continuous Drain Current (ID) 3.2 A —
N-Channel RDS(on) Max [DATA_NEEDED: N-ch RDS(on) value in mohm] —
P-Channel RDS(on) Max 55 mOhm (per Infineon part summary) —
Gate Drive Level Super Logic level, 2.5 V rated —
Configuration Common drain (back-to-back source pair) —
Total Package Power Dissipation (PD) 2.5 W @ 25 C (per DigiKey listing) —
工作结温 -55 C to +175 C -55 C to +150 C
封装 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) D2PAK (TO-263) surface mount
安装类型 Surface Mount Surface Mount
Avalanche Rated Yes —
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes / RoHS compliant —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID, Tc=25C) — -42 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) — 20 mOhm @ VGS = -10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — -2.0 V to -4.0 V
Power Dissipation (PD, Tc=25C) — 170 W
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC, typical 0.6 C/W]
Total Gate Charge (Qg) — 120 nC (typical per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
RoHS 状态 — Compliant (PBF suffix indicates Pb-free)
Qualification — JEDEC standard

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