BSZ900N20NS3GATMA1 vs BSC0906NSATMA1 Vergleich
Detaillierter Direktvergleich von BSZ900N20NS3GATMA1 von Infineon und BSC0906NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ900N20NS3GATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,48 | $0,48 |
| Part Number | BSZ900N20NS3GATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ | — |
| Typical RDS(on) @ VGS=10V | 77 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD, Tc=25C) | 62.5 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Gehäuse | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| ESD Protection | Yes (integrated) | — |
| Avalanche Energy Rated | Yes (EAS) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ VGS=10V] |
| Betriebstemperaturbereich | — | -55C to +150C (junction, typical) |
| Pin-Anzahl | — | 8 |