BSZ900N20NS3GATMA1 vs BSC0906NSATMA1 Comparación
Comparación detallada lado a lado de BSZ900N20NS3GATMA1 por Infineon y BSC0906NSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSZ900N20NS3GATMA1 | BSC0906NSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,48 |
| Part Number | BSZ900N20NS3GATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ | — |
| Typical RDS(on) @ VGS=10V | 77 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD, Tc=25C) | 62.5 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Encapsulado | PG-TSDSON-8 (TDSON-8 FL) | PG-TDSON-8-6 (SuperSO8, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 1 (unlimited) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| ESD Protection | Yes (integrated) | — |
| Avalanche Energy Rated | Yes (EAS) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 63 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| RDS(on) max (typical reference) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ VGS=10V] |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction, typical) |
| Recuento de pines | — | 8 |