BTF3050TEATMA1 vs BTS51202EKAXUMA1 Vergleich

Detaillierter Direktvergleich von BTF3050TEATMA1 von Infineon und BTS51202EKAXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTF3050TEATMA1 BTS51202EKAXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,38 $1,68
Switch Type N-Channel Low-Side Power Switch —
Ausgangskonfiguration 1:1 (Single channel) —
Continuous Drain Current (ID) 3 A —
On-Resistance (RDS(on)) Max 100 mOhm —
Current Limit (Internal) 30 A —
Logic Input Voltage (Vcc) 3.0 V to 5.5 V —
Logic Input Compatibility 3.3 V / 5 V CMOS —
Turn-On Time Max 15 us —
Turn-Off Time Max 30 us —
Adjustable Slew Rate Yes (SR pin) —
ESD Protection Yes (on-chip) —
Betriebstemperaturbereich -40 C to +150 C —
Gehäuse PG-TO252-5-11 (DPAK-5) PG-DSO-14-40-EP (14-pin SOIC with exposed pad)
Montageart Surface Mount (DPAK tab) Surface Mount
Automotive Qualification AEC-Q100 qualified —
Family HITFET+ (low-side) —
RoHS-Status Compliant Compliant
Lead-Free Yes —
Topologie — Dual High-Side Switch (2 channels)
Technology — Smart6 (N-channel vertical MOSFET with charge pump)
Number of Channels — 2
On-State Resistance (RDS(on)) — 120 mΩ (typical per channel)
Continuous Output Current — 2 A per channel (typical 2.5 A)
Operating Voltage (Vbb) — 8 V to 18 V
Load Type — Lamps up to 1×10 W, LEDs, resistive/inductive loads
Betriebstemperatur — -40 °C to +150 °C
Maximum Power Dissipation — 1800 mW
Integrated Protection — Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery
Diagnostic Output — Yes (status feedback pin)
Charge Pump — Integrated
Automotive Qualified — Yes

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