BTH60801EPLXUMA1 vs BTS51202EKAXUMA1 Vergleich

Detaillierter Direktvergleich von BTH60801EPLXUMA1 von Infineon und BTS51202EKAXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTH60801EPLXUMA1 BTS51202EKAXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,74 $1,68
Product Type Smart High-Side Power Switch —
Number of Channels 1 2
Topologie High-Side N-Channel MOSFET with Charge Pump Dual High-Side Switch (2 channels)
On-State Resistance (RDS(on)) 80 mΩ (typical) 120 mΩ (typical per channel)
Continuous Load Current 2.5 A —
Operating Voltage Range 4 V to 54 V —
Nominal Board Net 48 V (PROFET+ 48V family) —
Current Limitation Adjustable —
Diagnostic Output Current Sense (IS) pin Yes (status feedback pin)
Input Logic Active High and Active Low —
Protection Features Overtemperature, Overvoltage, Undervoltage, Short Circuit —
Gehäuse PG-TSDSO-14 (exposed pad) PG-DSO-14-40-EP (14-pin SOIC with exposed pad)
Betriebstemperaturbereich -40 °C to +150 °C (Tj) —
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified —
RoHS-Status Compliant Compliant
Technology — Smart6 (N-channel vertical MOSFET with charge pump)
Continuous Output Current — 2 A per channel (typical 2.5 A)
Operating Voltage (Vbb) — 8 V to 18 V
Load Type — Lamps up to 1×10 W, LEDs, resistive/inductive loads
Betriebstemperatur — -40 °C to +150 °C
Maximum Power Dissipation — 1800 mW
Integrated Protection — Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery
Charge Pump — Integrated
Automotive Qualified — Yes

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