BTH60801EPLXUMA1 vs BTS51202EKAXUMA1 비교

다음의 상세 나란히 비교: BTH60801EPLXUMA1 제조: Infineon 및 BTS51202EKAXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTH60801EPLXUMA1 BTS51202EKAXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.74 $1.68
Product Type Smart High-Side Power Switch —
Number of Channels 1 2
토폴로지 High-Side N-Channel MOSFET with Charge Pump Dual High-Side Switch (2 channels)
On-State Resistance (RDS(on)) 80 mΩ (typical) 120 mΩ (typical per channel)
Continuous Load Current 2.5 A —
Operating Voltage Range 4 V to 54 V —
Nominal Board Net 48 V (PROFET+ 48V family) —
Current Limitation Adjustable —
Diagnostic Output Current Sense (IS) pin Yes (status feedback pin)
Input Logic Active High and Active Low —
Protection Features Overtemperature, Overvoltage, Undervoltage, Short Circuit —
패키지 PG-TSDSO-14 (exposed pad) PG-DSO-14-40-EP (14-pin SOIC with exposed pad)
동작 온도 범위 -40 °C to +150 °C (Tj) —
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified —
RoHS 상태 Compliant Compliant
Technology — Smart6 (N-channel vertical MOSFET with charge pump)
Continuous Output Current — 2 A per channel (typical 2.5 A)
Operating Voltage (Vbb) — 8 V to 18 V
Load Type — Lamps up to 1×10 W, LEDs, resistive/inductive loads
동작 온도 — -40 °C to +150 °C
Maximum Power Dissipation — 1800 mW
Integrated Protection — Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery
Charge Pump — Integrated
Automotive Qualified — Yes

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