BTS3011TEATMA1 vs BTS500801TEAAUMA1 Vergleich
Detaillierter Direktvergleich von BTS3011TEATMA1 von Infineon und BTS500801TEAAUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BTS3011TEATMA1 | BTS500801TEAAUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,51 | $2,74 |
| Product Type | Smart Low-Side Power Switch | — |
| Number of Channels | 1 | 1 |
| On-Resistance R_DS(on) (typ.) | 11 mΩ | — |
| Continuous Load Current | 10 A | 10 A |
| Operating Voltage Range | 3 V to 28 V | — |
| Switch Technology | N-channel vertical power MOSFET | — |
| Input Type | Logic-level CMOS compatible | — |
| Gehäuse | PG-TO252-5 (DPAK-5) | PG-TO252-5-11 (DPAK-5, 4+Tab) |
| Anzahl der Pins | 5 (4 + Tab) | — |
| Betriebs-Sperrschichttemperatur | -40 °C to +150 °C | — |
| ESD Protection (HBM) | ±8 kV (output pin) | — |
| AEC-Q100 Qualification | Grade 1 qualified | — |
| Integrated Protections | Current limit, overtemperature shutdown, overvoltage clamp, ESD, ground-loss protection | — |
| Diagnostic Output | Open-drain status feedback pin | Current sense (IS pin) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | Classic PROFET (smart high-side switch) |
| Topologie | — | 1:1 N-Channel high-side |
| Nominal Supply Voltage | — | 12 V |
| Load Supply Voltage Range | — | 4.5 V to 28 V |
| On-State Resistance (RDS(on)) | — | 10 milliohms (typical) |
| Ausgangskonfiguration | — | High-side |
| Fault Protection | — | Current limiting, over-temperature, over-voltage, reverse battery, ground loss, ESD |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | Tape & Reel |
| Automotive Qualified | — | Yes (AEC-Q100 target application) |
| Power Transistor Technology | — | N-channel vertical power MOSFET with charge pump |