BTS723GWXUMA1 vs BTS621L1E3128ABUMA1 Vergleich
Detaillierter Direktvergleich von BTS723GWXUMA1 von Infineon und BTS621L1E3128ABUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BTS723GWXUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,24 | $2,45 |
| Product Type | Smart High-Side Power Switch | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 (dual independent high-side) | 2 (dual high-side, 1:1) |
| Technology | Classic PROFET™ (SMART7 vertical N-channel) | Smart SIPMOS (monolithic) |
| Nominal Operating Voltage (Vbb) | 6 V to 24 V | — |
| Load-Dump Survivability (Vbb(load-dump)) | Up to 40 V (per Classic PROFET spec) | — |
| Continuous Load Current per Channel (I_L(nom)) | 2.5 A | — |
| On-State Resistance per Channel (R_DS(on) typ) | [DATA_NEEDED: R_DS(on) at 25 C, full datasheet requires login] | — |
| Standby Current (I_bb(off)) | Very low (a few µA typical) | — |
| Input Logic Compatibility | CMOS-compatible | CMOS-compatible, ground-referenced |
| Diagnostic Output | Current-mirror status / fault flag (shared) | — |
| Protection Features | Overload, short circuit, ESD, over-temperature, over-voltage (active clamp) | — |
| Inductive Load Switching | Active Zener clamp for fast demagnetization | — |
| Betriebstemperaturbereich | -40 C to +150 C (junction) | -40 °C to +150 °C junction |
| Gehäuse | PG-DSO-14-37 (14-pin DSO with exposed thermal pad) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| RoHS Compliance | Compliant | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Diagnostic Feedback | — | Yes - open-load and overtemperature reporting |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| RoHS / Lead-Free | — | Compliant (Pb-free) |