BTS723GWXUMA1 vs BTS621L1E3128ABUMA1 对比

详细并排对比 BTS723GWXUMA1 出自 Infineon 和 BTS621L1E3128ABUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BTS723GWXUMA1 BTS621L1E3128ABUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.24 $2.45
Product Type Smart High-Side Power Switch Dual-channel smart high-side power switch (PROFET)
Number of Channels 2 (dual independent high-side) 2 (dual high-side, 1:1)
Technology Classic PROFET™ (SMART7 vertical N-channel) Smart SIPMOS (monolithic)
Nominal Operating Voltage (Vbb) 6 V to 24 V —
Load-Dump Survivability (Vbb(load-dump)) Up to 40 V (per Classic PROFET spec) —
Continuous Load Current per Channel (I_L(nom)) 2.5 A —
On-State Resistance per Channel (R_DS(on) typ) [DATA_NEEDED: R_DS(on) at 25 C, full datasheet requires login] —
Standby Current (I_bb(off)) Very low (a few µA typical) —
Input Logic Compatibility CMOS-compatible CMOS-compatible, ground-referenced
Diagnostic Output Current-mirror status / fault flag (shared) —
Protection Features Overload, short circuit, ESD, over-temperature, over-voltage (active clamp) —
Inductive Load Switching Active Zener clamp for fast demagnetization —
工作温度范围 -40 C to +150 C (junction) -40 °C to +150 °C junction
封装 PG-DSO-14-37 (14-pin DSO with exposed thermal pad) PG-TO263-7-2 (D2PAK-7, exposed tab)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified —
RoHS Compliance Compliant —
FET Topology — N-Channel vertical power MOSFET with charge pump
On-State Resistance Rds(on) — 8 mΩ typical per channel
Nominal Operating Voltage — 12 V (automotive bus)
Maximum Supply Voltage — 24 V (load-dump survivable)
Continuous Load Current — 4.4 A per channel
Diagnostic Feedback — Yes - open-load and overtemperature reporting
Embedded Protection — Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery
RoHS / Lead-Free — Compliant (Pb-free)

数据手册与资源

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