BTS723GWXUMA1 vs BTS621L1E3128ABUMA1 Сравнение
Подробное сравнение бок о бок BTS723GWXUMA1 от Infineon и BTS621L1E3128ABUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BTS621L1E3128ABUMA1 - 24V Dual Hi-Side Switch, 8mΩ PROFET | Infineon
BTS621L1E3128ABUMA1 ✓ АктивенСравнение характеристик
| Параметр | BTS723GWXUMA1 | BTS621L1E3128ABUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,24 | $2,45 |
| Product Type | Smart High-Side Power Switch | Dual-channel smart high-side power switch (PROFET) |
| Number of Channels | 2 (dual independent high-side) | 2 (dual high-side, 1:1) |
| Technology | Classic PROFET™ (SMART7 vertical N-channel) | Smart SIPMOS (monolithic) |
| Nominal Operating Voltage (Vbb) | 6 V to 24 V | — |
| Load-Dump Survivability (Vbb(load-dump)) | Up to 40 V (per Classic PROFET spec) | — |
| Continuous Load Current per Channel (I_L(nom)) | 2.5 A | — |
| On-State Resistance per Channel (R_DS(on) typ) | [DATA_NEEDED: R_DS(on) at 25 C, full datasheet requires login] | — |
| Standby Current (I_bb(off)) | Very low (a few µA typical) | — |
| Input Logic Compatibility | CMOS-compatible | CMOS-compatible, ground-referenced |
| Diagnostic Output | Current-mirror status / fault flag (shared) | — |
| Protection Features | Overload, short circuit, ESD, over-temperature, over-voltage (active clamp) | — |
| Inductive Load Switching | Active Zener clamp for fast demagnetization | — |
| Диапазон рабочих температур | -40 C to +150 C (junction) | -40 °C to +150 °C junction |
| Корпус | PG-DSO-14-37 (14-pin DSO with exposed thermal pad) | PG-TO263-7-2 (D2PAK-7, exposed tab) |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| RoHS Compliance | Compliant | — |
| FET Topology | — | N-Channel vertical power MOSFET with charge pump |
| On-State Resistance Rds(on) | — | 8 mΩ typical per channel |
| Nominal Operating Voltage | — | 12 V (automotive bus) |
| Maximum Supply Voltage | — | 24 V (load-dump survivable) |
| Continuous Load Current | — | 4.4 A per channel |
| Diagnostic Feedback | — | Yes - open-load and overtemperature reporting |
| Embedded Protection | — | Overload, current limit, short-circuit, thermal shutdown, overvoltage (load dump), fast demagnetization, reverse battery |
| RoHS / Lead-Free | — | Compliant (Pb-free) |