CM600DY-24T vs CM600DY-24T330G Vergleich
Detaillierter Direktvergleich von CM600DY-24T von Mitsubishi Electric und CM600DY-24T330G von Mitsubishi Electric. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Mitsubishi Electric
CM600DY-24T - 1200V 600A Dual IGBT Module | Mitsubishi Electric
CM600DY-24T ✓ AktivMitsubishi Electric
CM600DY-24T330G - 1200V 600A Dual IGBT Module | Mitsubishi
CM600DY-24T330G ✓ AktivSpezifikationsvergleich
| Parameter | CM600DY-24T | CM600DY-24T330G |
|---|---|---|
| Marke | Mitsubishi Electric | Mitsubishi Electric |
| Kategorie | IGBTs | IGBTs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,00 | $468,00 |
| Configuration | Dual (Half-Bridge) | Dual (Half-Bridge) |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V |
| Continuous Collector Current (IC) | 600 A | 600 A |
| Series | T-Series Standard Type | T-Series, 7th Generation Standard Type |
| Total Power Dissipation (Pc) | [DATA_NEEDED: total power dissipation] | — |
| Saturation Voltage (VCE(sat)) | [DATA_NEEDED: VCE(sat)] | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: VGES] | [DATA_NEEDED: VGES] |
| Junction Temperature (Tj) | [DATA_NEEDED: maximum junction temperature] | — |
| Thermal Resistance (Rth(j-c)) | [DATA_NEEDED: thermal resistance junction to case] | — |
| Isolation Voltage (Visol) | [DATA_NEEDED: isolation voltage] | — |
| Package Type | Insulated chassis-mount module | Insulated chassis-mount power module |
| Montageart | Chassis Mount (screw terminals) | Chassis Mount (screw-terminal) |
| Freewheeling Diode | Integrated (dual configuration) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| TIM Option | CM600DY-24T#330G variant with PC-TIM pre-applied | — |
| IGBT Technology | — | CSTBT (Carrier Stored Trench Bipolar Transistor) |
| Diode Technology | — | RFC diode |
| Thermal Interface | — | PC-TIM pre-applied (-330G suffix) |
| Package Technology | — | Thick Metal Substrate (TMS) |
| Isolation | — | Insulated type baseplate |
| Intended Use | — | High power switching use |
| Total Power Dissipation | — | [DATA_NEEDED: total power dissipation] |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | [DATA_NEEDED: VCE(sat)] |
| Thermal Resistance (Junction to Case) | — | [DATA_NEEDED: Rth(j-c)] |