CM600DY-24T vs CM600DY-24T330G Comparaison
Comparaison détaillée côte à côte de CM600DY-24T par Mitsubishi Electric et CM600DY-24T330G par Mitsubishi Electric. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Mitsubishi Electric
CM600DY-24T - 1200V 600A Dual IGBT Module | Mitsubishi Electric
CM600DY-24T ✓ ActifMitsubishi Electric
CM600DY-24T330G - 1200V 600A Dual IGBT Module | Mitsubishi
CM600DY-24T330G ✓ ActifComparaison des spécifications
| Paramètre | CM600DY-24T | CM600DY-24T330G |
|---|---|---|
| Marque | Mitsubishi Electric | Mitsubishi Electric |
| Catégorie | IGBTs | IGBTs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,00 | $468,00 |
| Configuration | Dual (Half-Bridge) | Dual (Half-Bridge) |
| Collector-Emitter Voltage (VCES) | 1200 V | 1200 V |
| Continuous Collector Current (IC) | 600 A | 600 A |
| Series | T-Series Standard Type | T-Series, 7th Generation Standard Type |
| Total Power Dissipation (Pc) | [DATA_NEEDED: total power dissipation] | — |
| Saturation Voltage (VCE(sat)) | [DATA_NEEDED: VCE(sat)] | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: VGES] | [DATA_NEEDED: VGES] |
| Junction Temperature (Tj) | [DATA_NEEDED: maximum junction temperature] | — |
| Thermal Resistance (Rth(j-c)) | [DATA_NEEDED: thermal resistance junction to case] | — |
| Isolation Voltage (Visol) | [DATA_NEEDED: isolation voltage] | — |
| Package Type | Insulated chassis-mount module | Insulated chassis-mount power module |
| Type de montage | Chassis Mount (screw terminals) | Chassis Mount (screw-terminal) |
| Freewheeling Diode | Integrated (dual configuration) | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| TIM Option | CM600DY-24T#330G variant with PC-TIM pre-applied | — |
| IGBT Technology | — | CSTBT (Carrier Stored Trench Bipolar Transistor) |
| Diode Technology | — | RFC diode |
| Thermal Interface | — | PC-TIM pre-applied (-330G suffix) |
| Package Technology | — | Thick Metal Substrate (TMS) |
| Isolation | — | Insulated type baseplate |
| Intended Use | — | High power switching use |
| Total Power Dissipation | — | [DATA_NEEDED: total power dissipation] |
| Tension de saturation collecteur-émetteur (Vce(sat)) | — | [DATA_NEEDED: VCE(sat)] |
| Thermal Resistance (Junction to Case) | — | [DATA_NEEDED: Rth(j-c)] |