DS1249AB-70IND+ vs DS1249AB-70IND Vergleich
Detaillierter Direktvergleich von DS1249AB-70IND+ von Analog Devices und DS1249AB-70IND von Analog Devices. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | DS1249AB-70IND+ | DS1249AB-70IND |
|---|---|---|
| Marke | Analog Devices | Analog Devices |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $65,80 | $49,85 |
| Speichertyp | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Speichergröße | 2 Mbit (2,097,152 bits) | 2 Mbit (262,144 x 8) |
| Speicherorganisation | 256K x 8 | 262,144 words x 8 bits |
| Schnittstelle | Parallel | Parallel |
| Access Time | 70 ns (max) | 70 ns |
| Write Cycle Time | 70 ns (word write, no write delay) | — |
| Data Retention | 10 years (typical, with internal lithium cell) | 10 years minimum (no external power) |
| Supply Voltage (VCC) | 5 V ±10% (typical 4.5 V to 5.5 V) | — |
| Betriebstemperaturbereich | -40 °C to +85 °C (industrial, -IND suffix) | — |
| Gehäuse / Bauform | 32-EDIP (Extended DIP, 0.600 in / 15.24 mm) | — |
| Montageart | Through-Hole (DIP module with socket) | Through-Hole (DIP module) |
| Pin-Anzahl | 32 | — |
| Built-in Battery | Yes (internal lithium energy source) | — |
| Write Protection | Automatic on VCC out-of-tolerance | Automatic on VCC out-of-tolerance |
| Endurance | Unlimited SRAM read/write cycles | — |
| RoHS-Status | Compliant (per Maxim Integrated product page) | Contains lithium - subject to special handling rules |
| Shipping Regulation | UN3481 PI970 (lithium battery - air/sea per IATA) | — |
| Lead-Free / Halogen-Free | Lead-free (RoHS compliant) | — |
| Write Cycle Endurance | — | Unlimited writes |
| Backup Mechanism | — | Internal lithium energy cell + VCC monitor |
| Operating Voltage (VCC) | — | 5 V (typical NVSRAM range) |
| Betriebstemperatur | — | -40C to +85C (industrial, -IND suffix) |
| Gehäuse | — | 32-EDIP (Extended DIP module, 0.600 inch / 15.24 mm) |
| Technology | — | Low-power CMOS |