EP2S130F1020C3 vs EP2S130F1020I4 Vergleich
Detaillierter Direktvergleich von EP2S130F1020C3 von Intel und EP2S130F1020I4 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | EP2S130F1020C3 | EP2S130F1020I4 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | NRND | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1.295,00 | $1.395,00 |
| Series | Stratix II | — |
| Family | Stratix II | Stratix II |
| Logic Elements / Cells | 132,540 | — |
| Logic Array Blocks (LABs) | 6,627 | — |
| User I/Os | 742 | — |
| Embedded Memory (TriMatrix) | [DATA_NEEDED: total Mbits] | — |
| DSP / Multiplier Blocks | [DATA_NEEDED: DSP block count] | — |
| Transceivers | Logic-rich SKU (no transceiver; transceiver variants use different suffix) | — |
| Maximum Internal Frequency | 778.82 MHz (per family datasheet) | — |
| Process Technology | 90 nm | — |
| Core Supply Voltage (VCCINT) | 1.15 V to 1.25 V | — |
| Gehäuse / Bauform | 1020-BBGA (FC-FBGA), 33x33 mm | — |
| Supplier Device Package | 1020-FBGA (33x33) | — |
| Montageart | Surface Mount | Surface Mount (FC-FBGA) |
| Betriebstemperatur | 0C to +85C (commercial, 'C' speed grade) | — |
| Speed Grade | C3 (commercial, -3 speed) | I (industrial performance) |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (per distributor listings) |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| Logic Elements | — | 132,540 |
| Equivalent LEs | — | ~180,000 |
| Adaptive Logic Modules (ALMs) | — | 53,016 |
| Embedded Memory (bits) | — | 6,747,840 |
| Embedded Memory (M512 blocks) | — | 530 |
| Embedded Memory (M4K blocks) | — | 768 |
| Embedded Memory (M-RAM blocks) | — | 4 |
| Embedded 18x18 Multipliers | — | 504 |
| DSP Blocks | — | 48 |
| User I/O Pins | — | 742 |
| User I/O Banks | — | 12 |
| Gehäuse | — | 1020-ball FC-FBGA (33x33 mm) |
| Process Node | — | 90 nm CMOS, all-layer copper |
| Core Voltage (VCCINT) | — | 1.2 V |
| Device Revision | — | 4 |
| Betriebs-Sperrschichttemperatur | — | -40C to +100C (industrial) |
| Configuration Scheme | — | Fast Passive Parallel x8, Passive Serial, JTAG |