EP2SGX90EF1152C3ES vs EP2SGX90EF1152C3 Vergleich
Detaillierter Direktvergleich von EP2SGX90EF1152C3ES von Intel und EP2SGX90EF1152C3 von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
EP2SGX90EF1152C3ES - Stratix II GX FPGA 90nm 558 I/O 1152-BBGA | Intel
EP2SGX90EF1152C3ES ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | EP2SGX90EF1152C3ES | EP2SGX90EF1152C3 |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2.050,00 | $1.180,00 |
| Family | Stratix II GX | — |
| Process Node | 90 nm | — |
| Logic Elements | 90,960 | — |
| Embedded Memory | 4,520,448 bits (approx. 4.5 Mbit) | — |
| User I/O Pins | 558 | — |
| Gehäuse | 1152-BBGA (FineLine BGA, 35x35 mm) | 1152-FBGA (FineLine BGA) |
| Speed Grade | C3 | C3 |
| Temperature Grade | Commercial Extended (-40 C to +100 C) | — |
| Core Voltage | 1.5 V (Enhanced, 'E' suffix) | — |
| High-Speed Transceivers | Up to 12 channels (per Stratix II GX family) | — |
| Transceiver Data Rate | Up to 6.375 Gbps per channel (family spec) | 3.125 - 6.375 Gbps |
| DSP Blocks | Yes, dedicated 18x18 multipliers and accumulators | — |
| PLL Count | [DATA_NEEDED: PLL count for EP2SGX90 variant] | — |
| User I/O Banks | 24 (per package datasheet) | — |
| Configuration | SRAM-based, supports Fast Passive Parallel, Fast Active Serial, JTAG | — |
| Montageart | Surface Mount (BGA) | Surface Mount (BGA) |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | Yes | — |
| Series | — | Stratix II GX |
| Logic Elements (LEs) | — | 90,960 |
| Total RAM Bits | — | 4,520,448 (4.5 Mbit) |
| User I/O Count | — | 558 |
| Number of LABs/CLBs | — | 4548 |
| Number of Transceivers | — | 12 |
| Number of PLLs | — | 4 |
| DSP Blocks (18x18 multipliers) | — | 384 |
| Core Voltage (VCCINT) | — | 1.2 V |
| Process Technology | — | 90 nm CMOS |
| Betriebstemperatur | — | 0C to +85C (commercial) |