EP2SGX90EF1152C3ES vs EP2SGX90EF1152C3 Comparação
Comparação detalhada lado a lado de EP2SGX90EF1152C3ES por Intel e EP2SGX90EF1152C3 por Intel. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Intel
EP2SGX90EF1152C3ES - Stratix II GX FPGA 90nm 558 I/O 1152-BBGA | Intel
EP2SGX90EF1152C3ES ⚠ Última compraComparação de especificações
| Parâmetro | EP2SGX90EF1152C3ES | EP2SGX90EF1152C3 |
|---|---|---|
| Marca | Intel | Intel |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Última compra | NRND |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2.050,00 | $1.180,00 |
| Family | Stratix II GX | — |
| Process Node | 90 nm | — |
| Logic Elements | 90,960 | — |
| Embedded Memory | 4,520,448 bits (approx. 4.5 Mbit) | — |
| User I/O Pins | 558 | — |
| Encapsulamento | 1152-BBGA (FineLine BGA, 35x35 mm) | 1152-FBGA (FineLine BGA) |
| Speed Grade | C3 | C3 |
| Temperature Grade | Commercial Extended (-40 C to +100 C) | — |
| Core Voltage | 1.5 V (Enhanced, 'E' suffix) | — |
| High-Speed Transceivers | Up to 12 channels (per Stratix II GX family) | — |
| Transceiver Data Rate | Up to 6.375 Gbps per channel (family spec) | 3.125 - 6.375 Gbps |
| DSP Blocks | Yes, dedicated 18x18 multipliers and accumulators | — |
| PLL Count | [DATA_NEEDED: PLL count for EP2SGX90 variant] | — |
| User I/O Banks | 24 (per package datasheet) | — |
| Configuration | SRAM-based, supports Fast Passive Parallel, Fast Active Serial, JTAG | — |
| Tipo de montagem | Surface Mount (BGA) | Surface Mount (BGA) |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | Yes | — |
| Series | — | Stratix II GX |
| Logic Elements (LEs) | — | 90,960 |
| Total RAM Bits | — | 4,520,448 (4.5 Mbit) |
| User I/O Count | — | 558 |
| Number of LABs/CLBs | — | 4548 |
| Number of Transceivers | — | 12 |
| Number of PLLs | — | 4 |
| DSP Blocks (18x18 multipliers) | — | 384 |
| Core Voltage (VCCINT) | — | 1.2 V |
| Process Technology | — | 90 nm CMOS |
| Temperatura de operação | — | 0C to +85C (commercial) |