EP2SGX90EF1152C3ES vs EP2SGX90EF1152C5ES Vergleich
Detaillierter Direktvergleich von EP2SGX90EF1152C3ES von Intel und EP2SGX90EF1152C5ES von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
EP2SGX90EF1152C3ES - Stratix II GX FPGA 90nm 558 I/O 1152-BBGA | Intel
EP2SGX90EF1152C3ES ⚠ Letzte BestellmöglichkeitIntel
EP2SGX90EF1152C5ES - Stratix II GX FPGA, 90K LEs, 1152-FBGA | Intel
EP2SGX90EF1152C5ES ObsoleteSpezifikationsvergleich
| Parameter | EP2SGX90EF1152C3ES | EP2SGX90EF1152C5ES |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2.050,00 | $1.495,00 |
| Family | Stratix II GX | Stratix II GX |
| Process Node | 90 nm | — |
| Logic Elements | 90,960 | 90,960 |
| Embedded Memory | 4,520,448 bits (approx. 4.5 Mbit) | — |
| User I/O Pins | 558 | — |
| Gehäuse | 1152-BBGA (FineLine BGA, 35x35 mm) | 1152-FBGA (FineLine BGA) |
| Speed Grade | C3 | C5 (commercial, mid-tier) |
| Temperature Grade | Commercial Extended (-40 C to +100 C) | — |
| Core Voltage | 1.5 V (Enhanced, 'E' suffix) | 1.2 V (typical) |
| High-Speed Transceivers | Up to 12 channels (per Stratix II GX family) | — |
| Transceiver Data Rate | Up to 6.375 Gbps per channel (family spec) | Up to 6.375 Gbps |
| DSP Blocks | Yes, dedicated 18x18 multipliers and accumulators | — |
| PLL Count | [DATA_NEEDED: PLL count for EP2SGX90 variant] | — |
| User I/O Banks | 24 (per package datasheet) | — |
| Configuration | SRAM-based, supports Fast Passive Parallel, Fast Active Serial, JTAG | — |
| Montageart | Surface Mount (BGA) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Embedded Memory (bits) | — | 4,520,448 |
| User I/Os | — | 558 |
| Number of Transceivers | — | 12 (up to 20 channels) |
| DSP Blocks (18x18 multipliers) | — | 384 |
| Betriebstemperatur | — | 0C to +85C (commercial) |
| Process Technology | — | 90 nm CMOS |
| Configuration Method | — | Fast passive parallel, active serial, JTAG |